Deposition selectivity enhancement and manufacturing method thereof

ABSTRACT

A method includes depositing an inhibitor layer on a first surface, depositing a film on a second surface by performing a first set of deposition cycles. Each deposition cycle includes adsorbing a first precursor over the second surface, performing a first purge process, adsorbing a second precursor over the second surface, and performing a second purge process. The method also includes performing a third purge process that is different from the first purge process or the second purge process.

PRIORITY CLAIM AND CROSS-REFERENCE

This patent application claims priority to U.S. Provisional ApplicationNo. 62/490,468, filed on Apr. 26, 2017 and entitled “DepositionSelectivity Enhancement and Manufacturing Method Thereof,” whichapplication is hereby incorporated herein by reference in its entirety.

BACKGROUND

Technological advances in Integrated Circuit (IC) materials and designhave produced generations of ICs, with each generation having smallerand more complex circuits than the previous generations. In the courseof IC evolution, functional density (for example, the number ofinterconnected devices per chip area) has generally increased whilegeometry sizes have decreased. This scaling down process providesbenefits by increasing production efficiency and lowering associatedcosts.

Such scaling down has also increased the complexity of processing andmanufacturing ICs and, for these advances to be realized, similardevelopments in IC processing and manufacturing are needed. For example,Fin Field-Effect Transistors (FinFETs) have been introduced to replaceplanar transistors. The structures of FinFETs and methods of fabricatingFinFETs are being developed.

The formation of FinFETs typically involves forming semiconductor fins,forming dummy gate electrodes on the semiconductor fins, etching endportions of the semiconductor fins, performing an epitaxy to regrowsource/drain regions, and forming contact plugs on the gate electrodesand source/drain regions.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1I illustrate a process flow for selective deposition inaccordance with some embodiments.

FIG. 2 illustrates a process flow for selective deposition in accordancewith some embodiments.

FIGS. 3-8, 9A-9B, 10A-10B, and 11-12 are cross-sectional views andperspective views of intermediate stages in the formation of FinField-Effect Transistors (FinFETs) in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments will be described with respect to a specific context,namely, a FinFET device and a method of forming the same. Variousembodiments discussed herein allow for selective deposition on surfacesduring FinFET formation. In some cases, the use of a selectivedeposition process such as that described herein can allow for fewerprocessing steps and less material deposited in unwanted regions. Withregard to a deposition process, a deposition's selectivity is a measureof a maximum film thickness deposited on a target surface withoutnucleation or build-up on an inhibitor-coated surface. In some cases,film deposition selectivity is limited by concurrent and/or delayednucleation on an inhibitor-coated surface due to mechanisms includingbut not limited to precursor physisorption or other mechanisms. Toprevent or delay film nucleation on an inhibitor-coated surface so as toenhance deposition selectivity, the present disclosure discussesembodiments which involve single or multiple intermittent purges duringthe film deposition process.

FIGS. 1A-1I illustrate example steps of a selective deposition processaccording to an embodiment. In particular, FIGS. 1A-1I illustratecross-sectional views of intermediate steps in the formation of anexample device 100. Some steps shown in FIGS. 1A-1I are also illustratedschematically in the process flow 200 shown in FIG. 2.

FIG. 1A illustrates a cross-sectional view of an example device 100including a first material 102 and a second material 104 in accordancewith some embodiments. First material 102 or second material 104 may be,for example, layers formed over a substrate (not shown in FIGS. 1A-1I).First material 102 and second material 104 are different materials.FIGS. 1A-1I depict illustrative examples, and in other cases firstmaterial 102 or second material 104 may have different thicknesses, havedifferent heights, include one or more sublayers, have top surfaces thatare not level or planar, have top surfaces that are not co-planar, haveprotrusions or recesses, be partially covered by another material orlayer, or have other features or variations as known in the art. In somecases, first material 102 and second material 104 are not fully adjacentas shown in FIGS. 1A-1I. For example, a third material may be presentbetween first material 102 and second material 104. In some embodiments,first material 102 may include a material such as Si, SiN, SiC, SiCN,SiOCN, W, TiN, TaN, SiGe, or another material. In some embodiments,first material 102 may be silicon doped with carbon and/or nitrogen, ametal, a metal nitride, a metal nitride doped with carbon, or anothermaterial or combination of materials. In some embodiments, secondmaterial 104 may include a material such as SiO₂, SiGe, SiP, or anothermaterial, with or without a surface oxide layer. In some embodiments,second material 104 may be silicon oxide doped with carbon and/ornitrogen, a metal oxide, or anther material or combination of materials.

FIG. 1A also shows oxide 106 over first material 102. In other cases,oxide 106 may be present over both first material 102 and secondmaterial 104, or oxide 106 may not be present at all. Oxide 106 may, forexample, be a native oxide, be a deposited oxide, or be another type ofdielectric layer. As an illustrative example, the first material 102 maybe Si, and oxide 106 may be a native SiO₂, though other materials mayalso be used.

FIG. 1B illustrates an optional oxide removal step in accordance withsome embodiments. The oxide removal step removes oxide 106 from firstmaterial 102, if oxide 106 is present. In some cases, the oxide removalstep may also recess the top surface of second material 104, as shown inFIG. 1B. As an illustrative example, the oxide 106 and the secondmaterial 104 may be SiO2, and the oxide removal step may include an HFtreatment that removes oxide 106 and recesses second material 104,though other materials and other oxide removal procedures may be used.In other cases, the oxide removal step does not recess the top surfaceof second material 104. In some cases, the oxide removal step mayprepare the surface of first material 102 or second material 104 forsubsequent processing. For example, the oxide removal step may formhydroxyl (—OH) terminations on the surface of second material 104.

FIG. 1C illustrates the formation of inhibitor 108 on second material104 in accordance with some embodiments. Inhibitor 108 is formed onsecond material 104 to suppress the adsorption of precursors on thesecond material 104 during a subsequent deposition, discussed in greaterdetail below with regard to FIGS. 1D-1I. Precursors are more likely toadsorb on certain surfaces (such as that of first material 102) and lesslikely to adsorb on surfaces covered with inhibitor 108, facilitatingselective deposition on first material 102 over second material 104.This respective step shown in FIG. 1C is illustrated as step 202 in theprocess flow 200 shown in FIG. 2. In some cases, inhibitor 108 is formedover first material 102 and second material 104 and then removed fromfirst material 102 using photolithographic techniques or othertechniques. In some cases, inhibitor 108 is formed by exposing firstmaterial 102 and second material 104 to a chemical process that bondsinhibitor groups to the surface of the second material 104 but not tothe surface of the first material 102. In some embodiments, inhibitor108 may be a self-assembled monolayer formed on the surface of secondmaterial 104. In some embodiments, inhibitor 108 may include silylgroups bonded to the surface of the second material 104. For example,the silyl groups may be of the form R₃Si, and R may include one or morealkyls such as CH₃, C2H₅, or the like. The inhibitor 108 may be formedfrom a chemical material such as trimethylchlorosilane (TMCS) or anotherchemical material. In some cases, the inhibitor 108 is formed from achemical material having a “leaving group” that disassociates from theother groups of the chemical material, allowing the remaining chemicalmaterial to bond to —OH on the surface of the second material 104. As anexample process, for a Si first material 102 and a SiO₂ second material104, inhibitor 108 may be formed on second material 104 by exposing thesecond material 104 to an octadecyltrichlorosilane solution followed bya rinsing process including toluene, acetone, or chloroform and thenperforming a drying process. In other embodiments, inhibitor 108 may beformed using different techniques. In some cases, inhibitor 108 may alsobe formed over a third material in addition to the second material 104,or a different type of inhibitor may be formed over the third material.

FIGS. 1D-1G illustrate example stages of a single cycle of an AtomicLayer Deposition (ALD) process including two precursors, in accordancewith some embodiments. The ALD cycle shown in FIGS. 1D-1G is alsoillustrated as steps 204-210 in the process flow 200 shown in FIG. 2. Inthe example shown in FIG. 1D-1G, ALD is used to form a depositionmaterial 122 over first material 102, using first precursor molecules110 and second precursor molecules 116. FIG. 1D illustrates the firststage of the ALD cycle, which includes adsorption of first precursormolecules 110 onto first material 102 and second material 104. Thisrespective step shown in FIG. 1D is illustrated as step 204 in theprocess flow 200 shown in FIG. 2. In the first stage of the ALD cycle,first precursor molecules 110 are introduced into the environment aroundfirst material 102 and second material 108. First precursor molecules110 can adsorb onto the exposed surface of first material 102 (anexample adsorbed first precursor molecule 112 is labeled in FIGS.1D-1G). First precursor molecules 110 may adsorb onto first material 102until the surface of first material 102 is saturated with firstprecursor molecules 110, as shown in FIG. 1D. In some cases, some firstprecursor molecules 110 may adsorb onto the surface of second material104 despite the presence of inhibitor 108 (example unwanted firstprecursor molecules 113 are labeled in FIGS. 1D-1E).

FIG. 1E illustrates the second stage of the ALD cycle, which includes afirst purge process to remove unadsorbed first precursor molecules 110from the environment and to remove unwanted first precursor molecules113 that have adsorbed onto the surface of second material 104. Thisrespective step shown in FIG. 1E is illustrated as step 206 in theprocess flow 200 shown in FIG. 2. In some embodiments, the first purgeprocess includes flowing a gas 114 over device 100. Gas 114 may be N₂,Ar₂, He₂, or another gas or combination of gases, including other inertgases. In some embodiments, gas 114 has a pressure of between about 50torr and about 100 torr, but gas 114 may be at other pressures. In someembodiments, the temperature of the environment during the first purgeprocess is between about 400° C. and about 500° C., though the firstpurge process may also be performed at a different temperature. In someembodiments, the first purge process includes flowing gas 114 for aduration of time between about 10 seconds and about 20 seconds, thoughgas 114 may be flowed for other durations of time in other embodiments.In some cases, a number of unwanted first precursor molecules 113 mayremain on the surface of second material 104 after the first purgeprocess, as shown in FIG. 1E.

FIG. 1F illustrates the third stage of the ALD cycle, which includes theadsorption of second precursor molecules 116 onto first material 102 andsecond material 104. In the third stage of the ALD cycle, secondprecursor molecules 116 are introduced into the environment around firstmaterial 102 and second material 108. This respective step shown in FIG.1F is illustrated as step 208 in the process flow 200 shown in FIG. 2.Second precursor molecules 116 adsorb onto first precursor molecules 110present on the surface of first material 102 (an example adsorbed secondprecursor molecule 118 is labeled in FIGS. 1F-1G). Second precursormolecules 110 may adsorb onto first precursor molecules 110 until thefirst precursor molecules 110 are saturated with second precursor 116molecules, as shown in FIG. 1F. In some cases, some second precursormolecules 116 may adsorb onto the surface of second material 104 despitethe presence of inhibitor 108 (example unwanted second precursormolecules 119 are labeled in FIGS. 1F-1G).

FIG. 1G illustrates the fourth stage of the ALD cycle, which includes asecond purge process to remove unadsorbed second precursor molecules 116from the environment and to remove unwanted first precursor molecules119 that have adsorbed onto the surface of second material 104. Thisrespective step shown in FIG. 1G is illustrated as step 210 in theprocess flow 200 shown in FIG. 2. In some embodiments, the second purgeprocess includes flowing a gas 120 over the device 100. The gas 120 maybe similar to gas 114 of the first purge process, or gas 120 may be adifferent gas. Moreover, the pressure, temperature, duration, or othercharacteristics of the second purge process may be similar to the firstpurge process or may be different from the first purge process. In somecases, a number of unwanted second precursor molecules 119 may remain onthe surface of second material 104 after the second purge process, asshown in FIG. 1G.

After the second purge process of FIG. 1G, the ALD cycle may repeatstarting with the first stage shown in FIG. 1D. This is illustrated asthe optional process line 214 in the process flow 200 shown in FIG. 2.In the first stage, first precursor molecules 110 adsorb onto thepreviously deposited second precursor molecules, followed by the firstpurge process of the second stage of the ALD cycle. Then, in the thirdstage, second precursor molecules 116 adsorb onto the previouslydeposited first precursor molecules, followed by the second purgeprocess of the fourth stage of the ALD cycle. In this manner, the ALDcycle may be repeated an arbitrary number of times to form anarbitrarily thick layer of deposition material 122 on the surface of thefirst material 102, as illustrated in FIG. 1H.

The deposition material 122 may be a material such as SiN, SiOC, SiOCN,or another material, with appropriate precursor materials used duringdeposition. For example, the deposition of SiN as a deposition material122 may use SiH₄, SiH₂Cl₂, Si2Cl₆, SiCl₄, SiCl₃H, SiBr₄, SiH₂I₂, SiF₄,SiI₄, or another material as a first precursor and N₂, NH₃, or anothermaterial as a second precursor. The deposition of SiOC may use SiH₂Cl₂,Si₂Cl₆, SiCl₄, SiCl₃H, SiBr₄, SiH₂I₂, SiF₄, SiI₄, or another material asprecursors. In some cases, a deposition material may use more than twoprecursor materials, and the corresponding ALD cycles may includeadditional adsorption and purge stages associated with the additionalprecursor materials. For example, the deposition of SiOCN as adeposition material 122 may use SiH₂Cl₂, Si₂Cl₆, SiCl₄, SiCl₃H, SiBr₄,SiH₂I₂, SiF₄, SiI₄, or another material as a first precursor CH₃, C₂H₆,C₃H₈, or other alkane groups or alkene groups, or another material as asecond precursor, O₂, H₂O, H₂O₂, O₃, or another material as a thirdprecursor, and N₂, NH₃, or another material as a fourth precursor. Insome cases, the same precursor material may be used in different stagesof the same ALD cycle.

However, as also illustrated in FIG. 1H, despite the first purge processand second purge process performed in each ALD cycle, some unwantedfirst precursor molecules 113 and unwanted second precursor molecules119 may remain on the surface of second material 104. This is shown inFIG. 1H by unwanted molecules 124 on the surface of second material 104.In some cases, after multiple ALD cycles, the unwanted molecules 124 canbuild up on the second material 104 and interfere with subsequentprocessing steps. For example, the unwanted molecules 124 can coverregions that should remain exposed, contaminate regions with unwantedmolecules 124, fill recesses with unwanted molecules 124 that shouldremain open, cause unwanted merging between separate regions ofdeposition material 122, or require additional processing steps to beadded to remove the unwanted molecules 124.

FIG. 1I illustrates an intermittent purge process to remove unwantedmolecules 124 from the surface of second material 104. This respectivestep shown in FIG. 1I is illustrated as step 212 in the process flow 200shown in FIG. 2. After the intermittent purge process of FIG. 1I, theALD cycle may repeat starting with the first stage shown in FIG. 1D.This is illustrated as the optional process line 216 in the process flow200 shown in FIG. 2.

An intermittent purge process may be performed one or more times duringthe formation of deposition material 122 via one or more ALD cycles. Insome embodiments, an intermittent purge process is performed repeatedlyduring the formation of deposition material 122, an intermittent purgeprocess performed after the completion of one or more ALD cycles. Forexample, the intermittent purge process may be performed after every ALDcycle, after every 2 ALD cycles, after every 10 ALD cycles, afterbetween about 30 ALD cycles and about 50 ALD cycles, or after anothernumber of ALD cycles. In some cases, the number of ALD cycles betweensubsequent intermittent purge processes varies. In some cases, anintermittent purge process is performed after an intermediate stage inan ALD cycle. An intermittent purge process may also be repeated morethan one time before a new ALD cycle begins, or after an ALD cyclecompletes.

In some embodiments, the intermittent purge process includes flowing agas 126 over device 100. The intermittent purge process may be similarto the first purge process shown in FIG. 1E or the second purge processshown in FIG. 1G, but may be different in some embodiments. Gas 126 maybe N₂, Ar₂, He₂, or another gas or combination of gases, including otherinert gases. In some embodiments, gas 126 has a pressure less than about500 torr, but gas 126 may be at other pressures. In some embodiments,the temperature of the environment during the intermittent purge processis between about 400° C. and about 500° C., though the intermittentpurge process may also be performed at a different temperature. In someembodiments, the intermittent purge process includes flowing gas 126 fora duration of time between about 600 seconds and about 1200 seconds,though gas 126 may be flowed for other durations of time in otherembodiments. In some cases, the temperature, pressure, or duration ofintermittent purge processes may vary during the formation of depositionmaterial 122.

Through the use of the intermittent purge process described herein, theselectivity of the deposition can be improved, as fewer unwantedprecursor molecules remain on the device during and after deposition. Inthis manner, a thicker deposition material layer may be deposited beforeunwanted precursor buildup becomes too problematic. Moreover, any needto remove and recoat an inhibitor layer during deposition to removeunwanted precursor buildup may be reduced or eliminated.

FIGS. 3 through 12 illustrate the cross-sectional views and perspectiveviews of intermediate stages in the formation of a FinFET usingselective deposition techniques described herein, in accordance withsome embodiments.

The fins of a FinFET device may be patterned by any suitable method. Forexample, the fins may be patterned using one or more photolithographyprocesses, including double-patterning or multi-patterning processes.Generally, double-patterning or multi-patterning processes combinephotolithography and self-aligned processes, allowing patterns to becreated that have, for example, pitches smaller than what is otherwiseobtainable using a single, direct photolithography process. For example,in one embodiment, a sacrificial layer is formed over a substrate andpatterned using a photolithography process. Spacers are formed alongsidethe patterned sacrificial layer using a self-aligned process. Thesacrificial layer is then removed, and the remaining spacers, ormandrels, may then be used to pattern the fins. Various embodimentspresented herein are discussed in the context of FinFETs formed using agate-last process. In other embodiments, a gate-first process may beused. Also, some embodiments contemplate aspects used in planar devices,such as planar FETs.

FIG. 3 illustrates a cross-sectional view of substrate 320, which is apart of wafer 300. Substrate 320 may be a bulk substrate or asemiconductor-on-insulator substrate. In accordance with someembodiments of the present disclosure, substrate 320 is formed of asemiconductor material selected from, and not limited to, silicongermanium, silicon carbon, germanium, and III-V compound semiconductormaterials such as GaAsP, AlIinAs, AlGaAs, GaInAs, GaInP, GaInAsP, andthe like. Substrate 320 may be lightly doped with a p-type or an n-typeimpurity. Wafer 300 includes N-type Metal Oxide Semiconductor (NMOS)region 310A and P-type Metal Oxide Semiconductor (PMOS) region 310B, inwhich a NMOS transistor and a PMOS transistor, respectively, are to beformed.

Pad oxide 322 and hard mask 324 are formed over semiconductor substrate320. In accordance with some embodiments of the present disclosure, padoxide 322 is formed of silicon oxide, which may be formed by oxidizing asurface layer of semiconductor substrate 320. Hard mask 324 may beformed of silicon nitride (SiN), silicon oxynitride (SiON), siliconcarbide (SiC), silicon carbo-nitride (SiCN), SiOCN, or the like. Inaccordance with some embodiments of the present disclosure, mask layer324 is formed of SiN, for example, using Low-Pressure Chemical VaporDeposition (LPCVD). In accordance with other embodiments of the presentdisclosure, mask layer 324 is formed by thermal nitridation of silicon,Plasma Enhanced Chemical Vapor Deposition (PECVD), or plasma anodicnitridation.

Next, as shown in FIG. 4, hard mask 324, pad oxide 322, and substrate320 are patterned to form trenches 326, during which hard mask 324 ispatterned first, and is then used as an etching mask to pattern theunderlying pad oxide 322 and substrate 320. Accordingly, semiconductorstrips 428A and 428B are formed in NMOS region 310A and PMOS region310B, respectively. Trenches 326 extend into semiconductor substrate320, and separate semiconductor strips 428A and 428B from each other. Inthe top view of wafer 300, each or some of semiconductor strips 428A and428B may be encircled by respective trenches 326.

In accordance with some embodiments of the present disclosure,semiconductor strips 428A and 428B are referred to as crown-shapesemiconductor strips. Semiconductor strip 428A includes semiconductorbase 430A and semiconductor strips 432A over base 430A. Semiconductorstrip 428B includes semiconductor base 430B and semiconductor strips432B over base 430B. Although FIG. 4 illustrates that there are threesemiconductor strips 432A (or 432B) over base 430A (or 430B), the numberof semiconductor strips 432A and 432B on each of the respective bases430A and 430B may be any integer number such as 1, 2, 3, 4, 5, or more,depending on the desirable drive currents of the resulting FinFETs. Thetop surface 430A′ of base 430A and top surface 430B′ of base 430B may besubstantially planar, or may be curved with dishing. In someembodiments, semiconductor strips 428A and 428B are not formed having acrown-shape, and in some cases bases 430A and 430B may not be present.In some cases, semiconductor strips 432A and 432B may be formed directlyover the substrate 320.

In accordance with some embodiments of the present disclosure, theformation of semiconductor strips 428A and 428B includes etchingsemiconductor substrate 320 to form strips 432A and 432B, formingsacrificial spacer layers (not shown) to cover the sidewalls ofsemiconductor strips 432A and 432B, and using the sacrificial spacerlayers and hard masks 324 in combination as an etching mask to furtheretch semiconductor substrate 320. The neighboring semiconductor strips432A are close to each other, and hence the portions of semiconductorsubstrate 320 between neighboring semiconductor fins 432A/432B are notetched down. As a result, bases 430A and 430B are formed. Thesacrificial spacer layers are then removed.

FIGS. 5 and 6 illustrate the formation and the removal of sacrificialliner oxide layer 334, which is formed on the exposed surfaces ofcrown-shape semiconductor strips 428A and 428B. Referring to FIG. 5,sacrificial liner oxide layer 434 is formed as a conformal layer, whosehorizontal portions and vertical portions have thicknesses close to eachother. In accordance with some embodiments of the present disclosure,sacrificial liner oxide layer 334 is formed by oxidizing wafer 300 in anoxygen-containing environment, for example, through Local Oxidation ofSilicon (LOCOS), wherein oxygen (O₂) may be included in the respectiveprocess gas. In accordance with other embodiments of the presentdisclosure, sacrificial liner oxide layer 334 is formed using In-SituSteam Generation (ISSG), for example, with water steam or a combined gasof hydrogen (H₂) and oxygen (O₂) used to oxidize the exposedsemiconductor substrate 320 and crown-shape semiconductor strips 428Aand 428B. The ISSG oxidation may be performed at an elevated temperaturehigher than room temperature.

Sacrificial liner oxide layer 334 is then removed, for example, in a wetetching or dry etching process, wherein HF solution or a combined gas ofNH₃ (ammonia) and HF₃ may be used. The resulting structure is shown inFIG. 6. As a result, the surfaces of crown-shape semiconductor strips428A and 428B are revealed again. The formation and the removal ofsacrificial liner oxide layer 334 may cause advantageous re-profile ofthe surfaces of crown-shape semiconductor strips 428A and 428B. Forexample, some undesired protrusions may be removed due to the higheroxidation rate of protrusions than smooth portions. The performance ofthe resulting FinFETs may thus benefit from the formation and theremoval of sacrificial liner oxide layer 334.

In the subsequent process steps, n-type FinFETs and p-type FinFETs areformed, for example, in NMOS region 310A and PMOS region 310B,respectively. The subsequent drawings illustrate the formation of oneFinFET, which represents both n-type FinFETs and p-type FinFETs. Forexample, referring to FIG. 7, when the respective FinFET that is to beformed is an n-type FinFET, the structure shown in FIG. 7 represents thestructure shown in NMOS region 310A (FIG. 6). Accordingly, strips 432represent semiconductor strips 432A, and crown-shape semiconductor strip428 represents semiconductor strip 428A. When the respective FinFET thatis to be formed is a p-type FinFET, the structure shown in FIG. 7represents the structure shown in PMOS region 310B (FIG. 6).Accordingly, strips 432 represent semiconductor strips 432B, andcrown-shape semiconductor strip 428 represents semiconductor strip 428B.It is appreciated that both the n-type and p-type FinFETs are formed onthe same wafer 300 and in the same chips.

FIG. 7 illustrates the formation and recess of dielectric material toform Shallow Trench Isolation (STI) regions 354, which fills thetrenches separating semiconductor strips. The dielectric material may beformed of SiO, SiC, SiN, or multilayers thereof. The formation method ofthe dielectric material may be selected from Flowable Chemical VaporDeposition (FCVD), spin-on coating, Chemical Vapor Deposition (CVD),ALD, High-Density Plasma Chemical Vapor Deposition (HDPCVD), LPCVD, andthe like. The dielectric material may be free from n-type and p-typedopants. In accordance with some embodiments in which FCVD is used, asilicon-containing precursor (for example, trisilylamine (TSA) ordisilylamine (DSA)) is used, and the resulting dielectric material isflowable (jelly-like). In accordance with alternative embodiments of thepresent disclosure, the flowable dielectric material is formed using analkylamino silane based precursor. During the deposition, plasma isturned on to activate the gaseous precursors for forming the flowableoxide.

After the dielectric material is formed, an anneal step is performed onwafer 300. The dielectric material, if being flowable at this time, willbe converted into a solid dielectric material. The anneal also improvesthe quality of the dielectric material, for example, resulting in theincrease in the density of the dielectric material. In accordance withsome embodiments of the present disclosure, the anneal is performedusing a method selected from furnace anneal, chamber anneal, tube annealor the like. For example, when furnace anneal is performed, theannealing temperature may be between about 750° C. and about 1,050° C.,and the anneal duration may be in the range between about 10 minutes andabout 30 minutes. The annealing may be performed in an oxygen-containingenvironment or in an environment not containing oxygen (O₂, O₃, or thelike).

The dielectric material is then recessed to form STI regions 354, andpad layer 322 (FIG. 6) may also be removed in the same process. Therecessing of STI regions 354 may be performed using an isotropic etchingprocess, which may be a dry etch process or a wet etch process. Therecessing of STI regions 354 results in the top portions ofsemiconductor strips 432 to protrude over the top surfaces of STIregions 354. The protruding portions are referred to as semiconductorfins (or protruding fins) 356 hereinafter.

FIG. 8 illustrates the perspective view of the formation of dummy gatestack 358 in accordance with some embodiments of the present disclosure.Dummy gate stack 358 may include dummy gate dielectric 364 and dummygate electrode 362 over dummy gate dielectric 360. Dummy gate dielectric364 may be formed of silicon oxide, or another material. Dummy gateelectrode 362 may be formed of polysilicon in accordance with someembodiments. Mask 363, such as a hard mask, may be formed of SiN, SiCN,or another material, may be formed over dummy gate electrode 362. Anadditional mask 365, such as a hard mask, may be formed over hard mask363, and may be formed of silicon oxide, or another material.

Referring to FIG. 9A, a spacer layer 366 is formed over the dummy gatestack 358 using a selective deposition process, and then portions ofdummy gate dielectric 364 are removed. In accordance with someembodiments of the present disclosure, spacer layer 366 is formed usinga selective deposition process such as that described above with respectto FIGS. 1A-1I. For example, prior to forming spacer layer 366, aninhibitor may be formed over exposed surfaces of STI regions 354, dummygate dielectric 364, and mask 365, using a process such as thatdescribed above with respect to FIG. 1C. Spacer layer 366 may include amaterial such as SiN, SiOC, SiCN, SiOCN, or another material orcombination of materials. Due to the selective deposition processincluding intermittent purges, the spacer layer 366 is formed only onexposed surfaces of the dummy gate electrode 362 and mask 363. In someembodiments, the spacer layer 366 is formed to a thickness between about10 Å and about 100 Å. By using the selective deposition process to formspacer layer 366, photolithographic steps to remove portions of a spacerlayer formed over the hard mask 365 or over the semiconductor fins 356may not be needed. Thus, in some cases, the number of processing stepsmay be reduced by using the selective deposition process describedherein.

After deposition of spacer layer 366, portions of dummy gate dielectric364 covering semiconductor fins 356 and STI regions 354 are removedusing an etching process (e.g., a wet etch or a dry etch). A portion ofdummy gate dielectric is left remaining underneath dummy gate electrode362, as illustrated in FIG. 9A.

FIG. 9B illustrates a cross-sectional view of a portion of the structureshown in FIG. 9A, wherein the cross-sectional view is obtained from thevertical plane crossing line 9B-9B in FIG. 9A. The cross-sectional viewshown in subsequent FIGS. 10A and 10B are also obtained from the samevertical plane (which passes through an uncovered portion ofsemiconductor fin(s) 56) crossing line 9B-9B as shown in FIG. 9A.

Next, as shown in FIGS. 10A and 10B, the exposed portions ofsemiconductor fins 356 are recessed in an etching process, and epitaxyregion 372 is grown from remaining fins 356 or strip 432. FIGS. 10A and10B show the same cross-sectional view obtained from the vertical planecrossing line 9B-9B in FIG. 9A. FIG. 10A shows epitaxy region 372 asmerged between each of fins 356, but in other embodiments a separatedepitaxy region 372 may be grown on each fin 356, as shown in FIG. 10B.Epitaxy region 372 forms the source/drain region of the resultingFinFET. Epitaxy region 372 may include silicon germanium doped withboron when the respective FinFET is a p-type FinFET, or may includesilicon phosphorous or silicon carbon phosphorous when the respectiveFinFET is an n-type FinFET.

Subsequently, a plurality of process steps is performed to finish theformation of the FinFET. An exemplary FinFET 380 is illustrated in across-sectional view in FIGS. 11 and 12, wherein the cross-sectionalview is obtained through the vertical plane labeled “PLANE 11” in FIG.10A. The dummy gate stack 358 as shown in FIG. 9A is replaced with areplacement gate stack 378 as shown in FIG. 11. Replacement gate stack378 includes gate dielectric 376 on the top surfaces and sidewalls ofthe respective fin 356, and gate electrode 377 over gate dielectric 376.Gate dielectric 376 may be formed through thermal oxidation, and hencemay include thermal silicon oxide. In some embodiments, prior toformation of gate dielectric 376, an interfacial layer is formed on theexposed surfaces of the respective fin 356. The interfacial layer mayinclude an oxide layer such as a silicon oxide layer, which may beformed through the thermal oxidation of the respective fin 356, achemical oxidation process, or a deposition process. In some cases, theinterfacial layer may include a silicon nitride layer, and in some casesthe interfacial layer may include one or more layers of silicon oxide,silicon nitride, or another material. The formation of gate dielectric376 may also include one or a plurality of deposition steps, and theresulting gate dielectric 376 may include a high-k dielectric materialor a non-high-k dielectric material. Gate electrode 377 is then formedon gate dielectric 376, and may be formed of metal layers. AnInter-Layer Dielectric (ILD) 382 is also formed over and around epitaxyregions 372, spacer layer 366, and dummy gate stack 358. ILD 382 may be,for example a silicon oxide. The formation processes of the replacementgate stack may include forming additional layers such as barrier layers,capping layers, work-function layers, or other layers not shown in FIG.11 for clarity. These additional layers may include materials such asTiN, TaN, W, SiN, SiOCN, or other materials.

As illustrated in FIG. 11, a dielectric cap 390 is formed overreplacement gate stack 378 using selective deposition techniquesdescribed herein. For example, an inhibitor may first be formed overexposed surfaces of ILD 382, and the dielectric cap 390 deposited overexposed surfaces of replacement gate stack 378. Dielectric cap 390 maybe a material such as SiN, SiOCN, or another material. In someembodiments, dielectric cap 390 is formed to a thickness between about10 Å and about 100 Å. Dielectric cap 390 may be used as an etch stopduring subsequent processing, described in greater detail below.Dielectric cap 390 material is selectively deposited only over thereplacement gate stack 378 and not over ILD 382. In this manner,surfaces of ILD 382 remain exposed for subsequent processing, andadditional photolithographic or etching steps to remove unwantedprecursor material over surfaces of ILD 382 may not be needed.

As illustrated in FIG. 12, gate contact plug 392 and source/draincontact plugs 388 are formed to electrically connect the replacementgate stack 378 and source/drain regions 372, respectively. A dielectriclayer 394 is formed over ILD 382 and dielectric cap 390. Openings areetched into dielectric layer 394, using dielectric cap 390 as an etchstop layer. The openings then are filled with conductive material toform gate contact plug 392 and source/drain contact plugs 388. In otherembodiments, gate contact plug 392 and source/drain contact plugs 388may be formed using separate photolithographic and etching steps. Theformation of gate contact plug 392 or source/drain contact plugs 388 mayalso include additional steps not described in detail here.

The embodiments of the present disclosure have some advantageousfeatures. By increasing the selectivity of the deposition process, fewerprocessing steps may be required. For example, steps removing andrecoating an inhibitor may be reduced or eliminated. The increasedselectivity may also allow films of arbitrary thickness to be deposited.The increased selectivity also can allow deposition on surfaces withinnon-planar surfaces or surfaces within narrow spaces, such as innersurfaces of a small trench or opening, or surfaces under an overhangingstructure. The embodiments of the present disclosure may be applicableto various deposition techniques, such as ALD, plasma-enhanced ALD(PEALD), Chemical Vapor Deposition (CVD), or other depositiontechniques. The embodiments may also be applied to the selectivedeposition of different types of materials, such as high-k materials,low-k materials, metal nitrides, or other types of materials. Theembodiments may be applied to selective deposition between differenttypes and combinations of surface materials, such as silicon surfaces,metal surfaces, dielectric surfaces, or surfaces of other materials.

In an embodiment, a method includes depositing an inhibitor layer on afirst surface of a semiconductor device and depositing a film on asecond surface of the semiconductor device by performing a first set ofdeposition cycles, wherein each deposition cycle includes adsorbing afirst precursor over the second surface; performing a first purgeprocess; adsorbing a second precursor over the second surface; andperforming a second purge process. The method also includes performing athird purge process that is different from the first purge process orthe second purge process. In an embodiment, the method further includesperforming a second set of deposition cycles and performing the thirdpurge process. In an embodiment, the first set of deposition cyclescomprises between about 30 and about 50 cycles. In an embodiment, thefirst surface is a first material and the second surface is a secondmaterial that is different from the first material. In an embodiment,the first material includes a silicon oxide and the second materialincludes silicon. In an embodiment, the first purge process includesflowing a gas over the first surface and the second surface for a firstduration of time. In an embodiment, the third purge process includesflowing a gas over the first surface and the second surface for a secondduration of time that is greater than the first duration of time. In anembodiment, depositing the film includes using an Atomic LayerDeposition (ALD) process. In an embodiment, the film includes SiN. In anembodiment, the inhibitor layer is free of the first precursor or thesecond precursor after performing a third purge process.

In an embodiment, a method of forming a device includes forming a gatestructure of the device over a semiconductor substrate; treating a firstsurface of the device to suppress the adsorption of first precursors orsecond precursors onto the first surface of the device; exposing thedevice to first precursors and exposing the device to second precursorsto form a first portion of a dielectric layer on a second surface of thegate structure of the device, wherein the second surface is adjacent thefirst surface and wherein the second surface is a different materialthan the first surface; flowing a gas over the first surface to removefirst precursors and second precursors from the first surface; andexposing the device to first precursors and second precursors to form asecond portion of the dielectric layer on the first portion of thedielectric layer. In an embodiment treating the first surface tosuppress the adsorption of first precursors or second precursors ontothe first surface includes forming an inhibitor on the first surface. Inan embodiment the first surface is an oxide. In an embodiment, themethod further includes flowing a gas over the first surface to removefirst precursors and second precursors from the first surface afterdepositing the first precursors and the second precursors on thedielectric layer. In an embodiment, the gate structure is a dummy gatestack. In an embodiment, the gas is N₂. In an embodiment, the dielectriclayer includes SiN.

In an embodiment, a method, includes forming a dummy gate stack on asubstrate, the dummy gate stack including a first material and a secondmaterial that is different than the first material; forming a gatespacer layer over a first surface of the first material of the dummygate stack, including forming an inhibitor over a second surface of thesecond material; and exposing the first surface of the first materialand the inhibitor to a precursor; forming multiple source/drain regionsin the substrate; removing the dummy gate stack to leave an opening; andforming a replacement gate stack within the opening. In an embodiment,the replacement gate stack includes a third material, and the methodfurther includes forming an interlayer dielectric layer (ILD) adjacentthe replacement gate stack; and forming an etch stop layer over a thirdsurface of the third material of the replacement gate stack, includingforming an inhibitor over a fourth surface of the ILD; and exposing thethird surface of the third material and the fourth surface of the ILD toa precursor. In an embodiment, the gate spacer layer includes SiN. In anembodiment, the gate spacer layer is formed to a thickness between about50 Å and about 100 Å.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: depositing an inhibitorlayer on a first surface of a semiconductor device; depositing a film ona second surface of the semiconductor device by performing a first setof deposition cycles, wherein the first surface is a first material andthe second surface is a second material that is different from the firstmaterial, wherein the first material comprises an oxide, and whereineach deposition cycle comprises: adsorbing a first precursor over thesecond surface; performing a first purge process; adsorbing a secondprecursor over the second surface; and performing a second purgeprocess; and performing a third purge process that is different from thefirst purge process or the second purge process.
 2. The method of claim1, further comprising: performing a second set of deposition cycles; andperforming the third purge process.
 3. The method of claim 1, whereinthe first set of deposition cycles comprises between about 30 and about50 cycles.
 4. The method of claim 1, wherein the first purge processcomprises flowing a gas over the first surface and the second surfacefor a first duration of time.
 5. The method of claim 1, wherein thethird purge process comprises flowing a gas over the first surface andthe second surface for a second duration of time that is greater thanthe first duration of time.
 6. The method of claim 1, wherein depositingthe film comprises using an Atomic Layer Deposition (ALD) process. 7.The method of claim 1, wherein the film comprises SiN.
 8. The method ofclaim 1, wherein the inhibitor layer is free of the first precursor orthe second precursor after performing a third purge process.
 9. Themethod of claim 1, wherein the second material comprises polysilicon.10. The method of claim 1, wherein the third purge process comprises aprocess temperature between 400° C. and 500° C.
 11. A method of forminga device comprising: forming a gate structure of the device over asemiconductor substrate; treating a first surface of the device tosuppress the adsorption of first precursors or second precursors ontothe first surface of the device; exposing the device to first precursorsand exposing the device to second precursors to form a first portion ofa dielectric layer on a second surface of the gate structure of thedevice, wherein the second surface is adjacent the first surface andwherein the second surface is a different material than the firstsurface; flowing a gas over the first surface to remove first precursorsand second precursors from the first surface; and exposing the device tofirst precursors and second precursors to form a second portion of thedielectric layer on the first portion of the dielectric layer.
 12. Themethod of claim 11, wherein treating the first surface to suppress theadsorption of first precursors or second precursors onto the firstsurface comprises forming an inhibitor on the first surface.
 13. Themethod of claim 11, wherein the first surface is an oxide.
 14. Themethod of claim 11, further comprising flowing a gas over the firstsurface to remove first precursors and second precursors from the firstsurface after depositing the first precursors and the second precursorson the dielectric layer.
 15. The method of claim 11, wherein the gatestructure is a dummy gate stack.
 16. The method of claim 11, wherein thedielectric layer comprises SiN.
 17. A method, comprising: forming adummy gate stack on a substrate, the dummy gate stack comprising a firstmaterial and a second material that is different than the firstmaterial; forming a gate spacer layer over a first surface of the firstmaterial of the dummy gate stack, comprising: forming an inhibitor overa second surface of the second material; and exposing the first surfaceof the first material and the inhibitor to a precursor; forming aplurality of source/drain regions in the substrate; removing the dummygate stack to leave an opening; and forming a replacement gate stackwithin the opening.
 18. The method of claim 17, wherein the replacementgate stack comprises a third material, and further comprising: formingan interlayer dielectric layer (ILD) adjacent the replacement gatestack; and forming an etch stop layer over a third surface of the thirdmaterial of the replacement gate stack, comprising: forming an inhibitorover a fourth surface of the ILD; and exposing the third surface of thethird material and the fourth surface of the ILD to a precursor.
 19. Themethod of claim 17, wherein the gate spacer layer comprises SiN.
 20. Themethod of claim 17, wherein the gate spacer layer is formed to athickness between about 10 Å and about 100 Å.